AIGAAS/GAAS 2-DEG FETS FABRICATED FROM MO-CVD WAFERS

被引：14
作者：
TAKANASHI, Y
KOBAYASHI, N
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 03期
关键词：
D O I：
10.1109/EDL.1985.26078
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：154 / 156
页数：3
相关论文
共 13 条
[1]   GROWTH OF (AL,GA)AS/GAAS HETEROSTRUCTURES FOR HEMT DEVICES [J].
ANDRE, JP ;
BRIERE, A ;
ROCCHI, M ;
RIET, M .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :445-449
[2]   METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].
DELAGEBEAUDEUF, D ;
LINH, NT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960
[3]  
Drummond T. J., 1982, International Electron Devices Meeting. Technical Digest, P586
[4]   MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].
DRUMMOND, TJ ;
MORKOC, H ;
LEE, K ;
SHUR, M .
ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341
[5]   HIGH-SPEED LOW-VOLTAGE RING OSCILLATORS BASED ON SELECTIVELY DOPED HETEROJUNCTION TRANSISTORS [J].
FEUER, MD ;
HENDEL, RH ;
KIEHL, RA ;
HWANG, JCM ;
KERAMIDAS, VG ;
ALLYN, CL ;
DINGLE, R .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) :306-307
[6]   CURRENT-VOLTAGE CHARACTERISTICS OF AN ALGAAS/GAAS HETEROSTRUCTURE FET FOR HIGH GATE VOLTAGES [J].
HIRANO, M ;
TAKANASHI, Y ;
SUGETA, T .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :496-499
[7]  
KOBAYASHI N, 1984, ELECTRON LETT, V20, P887, DOI 10.1049/el:19840602
[8]  
KOBAYASHI N, 1984, 15TH P C SOL STAT DE, P671
[9]   HIGH-PERFORMANCE MODULATION-DOPED GAAS INTEGRATED-CIRCUITS WITH PLANAR STRUCTURES [J].
LEE, CP ;
WANG, WI .
ELECTRONICS LETTERS, 1983, 19 (05) :155-157
[10]   EXTRINSIC LAYER AT ALXGA1-XAS-GAAS INTERFACES [J].
MILLER, RC ;
TSANG, WT ;
MUNTEANU, O .
APPLIED PHYSICS LETTERS, 1982, 41 (04) :374-376
12