CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE

被引:166
作者
STERLING, HF
SWANN, RCG
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D O I
10.1016/0038-1101(65)90033-X
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:653 / &
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共 5 条
[1]   ELECTRICAL PROPERTIES OF THIN ORGANIC FILMS [J].
BRADLEY, A ;
HAMMES, JP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (01) :15-22
[2]   GLOW DISCHARGE FORMATION OF SILICON OXIDE AND DEPOSITION OF SILICON OXIDE THIN FILM CAPACITORS BY GLOW DISCHARGE TECHNIQUES [J].
ING, SW ;
DAVERN, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :284-&
[3]  
RABENAU A, 1963, BER DTSCH KERAM GES, V40, P6
[4]   DIELECTRIC PROPERTIES OF CROSS-LINKED POLYSTYRENE FILM FORMED IN GLOW DISCHARGE [J].
STUART, M .
NATURE, 1963, 199 (488) :59-&
[5]  
Turkdogan E.T., 1958, J APPL CHEM, V8, P296