THERMAL EMISSION RATES AND CAPTURE CROSS-SECTION OF MAJORITY CARRIERS AT TITANIUM LEVELS IN SILICON

被引：18

作者：

MORANTE, JR ^{[1
]}

CARCELLER, JE ^{[1
]}

CARTUJO, P ^{[1
]}

BARBOLLA, J ^{[1
]}

机构：

[1] UNIV SARAGOSSA,FAC CIENCIAS,DEPT ELECTR & ELECTR,SARAGOSSA,SPAIN

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 01期

关键词：

D O I：

10.1016/0038-1101(83)90153-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1 / 6

页数：6

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