Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films

被引：34

作者：

Benramache, Said ^{[1
]}

Chabane, Foued ^{[2
]}

Benhaoua, Boubaker ^{[3
]}

Lemmadi, Fatima Z. ^{[2
]}

机构：

[1] Univ Biskra, Fac Sci, Mat Sci Lab, Mexico City 07000, DF, Mexico

[2] Univ Biskra, Fac Technol, Mech Engn, Biskra 07000, Algeria

[3] Univ El Oued, Inst Technol, Phys Lab, El Oued 39000, Algeria

来源：

JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 02期

关键词：

ZnO; thin film; growth time; ultrasonic spray technique;

D O I：

10.1088/1674-4926/34/2/023001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper examines the growth of ZnO thin films on glass substrate at 350 degrees C using an ultrasonic spray technique. We have investigated the influence of growth time ranging from 1 to 4 min on structural, optical and electrical properties of ZnO thin films. The as-grown films exhibit a hexagonal structure wurtzite and are (002) oriented. The maximum value of grain size G =D 63.99 nm is attained for ZnO films grown at 2 min. The average transmittance is about 80%, thus the films are transparent in the visible region. The optical gap energy is found to increase from 3.26 to 3.37 eV with growth time increased from 1 to 2 min. The minimum value of electrical resistivity of the films is 0.13 Omega. cm obtained at 2 min. A systematic study on the influence of growth time on the properties of ZnO thin films deposited by ultrasonic spray at 350 ffi C has been reported.

引用

页数：4

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