LOCALIZED ELECTRON STATES ASSOCIATED WITH GA-VACANCY AND AS-VACANCY IN GAAS

被引:15
作者
JAROS, M [1 ]
机构
[1] UNIV NEWCASTLE TYNE,DEPT THEORET PHYS,NEWCASTLE TYNE,ENGLAND
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1975年 / 8卷 / 23期
关键词
D O I
10.1088/0022-3719/8/23/005
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:L550 / L553
页数:4
相关论文
共 5 条
[1]  
Cohen M. L., 1970, Solid state physics: advances in research and applications, P37, DOI 10.1016/S0081-1947(08)60070-3
[2]   COLOUR CENTRES IN IRRADIATED DIAMONDS .1. [J].
COULSON, CA ;
KEARSLEY, MJ .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 241 (1227) :433-454
[3]   2-ELECTRON IMPURITY STATES IN GAP - O [J].
JAROS, M .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (15) :2455-2462
[4]   MOLECULAR-ORBITAL TREATMENT FOR DEEP LEVELS IN SEMICONDUCTORS - SUBSTITUTIONAL NITROGEN AND LATTICE VACANCY IN DIAMOND [J].
MESSMER, RP ;
WATKINS, GD .
PHYSICAL REVIEW B, 1973, 7 (06) :2568-2590
[5]   LOCALIZED DEFECTS IN PBTE [J].
PARADA, NJ .
PHYSICAL REVIEW B, 1971, 3 (06) :2042-&