THEORY OF THE INTERFACE EXCITON IN A STRONG MAGNETIC-FIELD

被引:11
|
作者
VIET, NA [1 ]
BIRMAN, JL [1 ]
机构
[1] NATL CTR NAT SCI & TECHNOL,INST PHYS,HANOI 10000,VIETNAM
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 20期
关键词
D O I
10.1103/PhysRevB.51.14337
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A simple theoretical model for the interface exciton in a strong magnetic field is developed. We propose that in the case of a strong magnetic field, a bound state for the interface exciton exists for fields greater than some critical value B0. It is shown that contrary to the case with no field, the interface exciton in a strong magnetic field is localized near the junction plane and can have a large binding energy. Using the developed model, we made a theoretical study of the explanation by Clark et al. of the nature of the B peak observed in their recent photoluminescence experiment [Clark et al., Physica B 201, 301 (1994)], and we obtained good agreement with their results. © 1995 The American Physical Society.
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页码:14337 / 14340
页数:4
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