GAIN CHARACTERISTICS OF GAN QUANTUM-WELLS INCLUDING MANY-BODY EFFECTS

被引：5
|
作者：
REES, P [1 ]
COOPER, C [1 ]
BLOOD, P [1 ]
SMOWTON, PM [1 ]
HEGARTY, J [1 ]
机构：
[1] UNIV DUBLIN TRINITY COLL,DEPT PHYS,DUBLIN 2,IRELAND
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 14期
关键词：
GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR JUNCTION LASERS;
D O I：
10.1049/el:19950826
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors have calculated the gain-current characteristics for a 70 Angstrom GaN-Al0.14Ga0.86N quantum well and show that the inclusion of Coulomb enhancement increases the current at a given gain by similar to 50%, and has an effect on the predicted laser wavelength.
引用
收藏
页码：1149 / 1150
页数：2
相关论文
共 50 条
  • [41] Many-body origin of the "trion line" in doped quantum wells
    Combescot, M
    Tribollet, J
    Karczewski, G
    Bernardot, F
    Testelin, C
    Chamarro, M
    EUROPHYSICS LETTERS, 2005, 71 (03): : 431 - 437
  • [42] Magnetic oscillation of many-body effects in CdTe based modulation doped quantum wells
    Shen, JX
    Ossau, W
    Fischer, F
    Waag, A
    Landwehr, G
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 1057 - 1060
  • [43] Many-body effects on intersubband transitions in polar ZnO/ZnMgO multiple quantum wells
    Yildirim, Hasan
    PHYSICA B-CONDENSED MATTER, 2019, 571 : 26 - 31
  • [44] GAIN SWITCHING IN COUPLED QUANTUM-WELLS
    AHN, D
    YOO, TK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (04): : 1055 - 1058
  • [45] Many body theory of THz intervalence gain in quantum wells
    Pereira, M. F.
    OPTICAL AND QUANTUM ELECTRONICS, 2008, 40 (14-15) : 1091 - 1095
  • [46] Influence of many-body effects on the quantum coherence of 2D excitons in GaAs quantum wells
    Kuhl, J
    Mayer, EJ
    Hubner, M
    Smith, GO
    Bott, K
    Heuckeroth, V
    Bennhardt, D
    Koch, SW
    Thomas, P
    ULTRAFAST PROCESSES IN SPECTROSCOPY, 1996, : 221 - 224
  • [47] Many body theory of THz intervalence gain in quantum wells
    M. F. Pereira
    Optical and Quantum Electronics, 2008, 40 : 1091 - 1095
  • [48] Piezoelectric and spontaneous polarization effects on many-body optical gain of wurtzite InGaN/GaN quantum well with arbitrary crystal orientation
    Park, SH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (08): : 5052 - 5055
  • [49] THEORETICAL GAIN IN STRAINED INGAAS/ALGAAS QUANTUM-WELLS INCLUDING VALENCE-BAND MIXING EFFECTS
    CORZINE, SW
    YAN, RH
    COLDREN, LA
    APPLIED PHYSICS LETTERS, 1990, 57 (26) : 2835 - 2837
  • [50] Non-Markovian gain of strained-layer wurtzite GaN quantum-well lasers with many-body effects
    Ahn, D
    Park, SH
    Kim, TI
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (03) : 520 - 526
12345