GAIN CHARACTERISTICS OF GAN QUANTUM-WELLS INCLUDING MANY-BODY EFFECTS

被引：5

作者：

REES, P ^{[1
]}

COOPER, C ^{[1
]}

BLOOD, P ^{[1
]}

SMOWTON, PM ^{[1
]}

HEGARTY, J ^{[1
]}

机构：

[1] UNIV DUBLIN TRINITY COLL,DEPT PHYS,DUBLIN 2,IRELAND

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 14期

关键词：

GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR JUNCTION LASERS;

D O I：

10.1049/el:19950826

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have calculated the gain-current characteristics for a 70 Angstrom GaN-Al0.14Ga0.86N quantum well and show that the inclusion of Coulomb enhancement increases the current at a given gain by similar to 50%, and has an effect on the predicted laser wavelength.

引用

页码：1149 / 1150

页数：2

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