GAIN CHARACTERISTICS OF GAN QUANTUM-WELLS INCLUDING MANY-BODY EFFECTS

被引：5
|
作者：
REES, P [1 ]
COOPER, C [1 ]
BLOOD, P [1 ]
SMOWTON, PM [1 ]
HEGARTY, J [1 ]
机构：
[1] UNIV DUBLIN TRINITY COLL,DEPT PHYS,DUBLIN 2,IRELAND
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 14期
关键词：
GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR JUNCTION LASERS;
D O I：
10.1049/el:19950826
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors have calculated the gain-current characteristics for a 70 Angstrom GaN-Al0.14Ga0.86N quantum well and show that the inclusion of Coulomb enhancement increases the current at a given gain by similar to 50%, and has an effect on the predicted laser wavelength.
引用
收藏
页码：1149 / 1150
页数：2
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