EFFECTS OF ION-IMPLANTATION ON POLYCRYSTALLINE DIAMOND FILMS

被引：3
|
作者：
ZHANG, XK
GUO, JG
YAO, YF
FANG, F
机构：
[1] Shanghai Institute of Metallurgy, Academia Sinica
来源：
VACUUM | 1992年 / 43卷 / 11期
关键词：
D O I：
10.1016/0042-207X(92)90327-S
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of ion implantation on the resistivity and structure of polycrystalline diamond films which were prepared by hot-filament chemical vapor deposition using methane as the reactant gas are reported. Ion implantation was carried out with 80 ke V P+ ions at different temperatures. The depth profile of P+ in diamond measured by RBS is consistent with the results of TRIM calculation. After ion bombardment the resistivity of CVD diamond films decreases to a saturated value. The structural changes after ion irradiation were characterized by SEM and Raman spectra, and the conduction mechanism is also discussed.
引用
收藏
页码：1047 / 1049
页数：3
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