OSCILLATORY HIGH-FIELD MAGNETIZATION IN LAP DOPED WITH CE

被引:6
作者
KINDO, K
SHIBATA, T
INOUE, T
HAGA, Y
SUZUKI, T
CHIBA, Y
DATE, M
机构
[1] OSAKA UNIV, FAC SCI, DEPT PHYS, TOYONAKA, OSAKA 560, JAPAN
[2] TOHOKU UNIV, FAC SCI, DEPT PHYS, SENDAI, MIYAGI 980, JAPAN
[3] MIYAGI UNIV EDUC, DEPT PHYS, SENDAI 980, JAPAN
[4] JAPAN ATOM ENERGY RES INST, ADV SCI RES CTR, TOKAI, IBARAKI 31911, JAPAN
关键词
HIGH FIELD MAGNETIZATION; DE-HAAS-VAN-ALPHEN EFFECT; LANDAU LEVEL; LOW CARRIER DENSITY; DILUTE CE IN LAP; CEP; ESR;
D O I
10.1143/JPSJ.62.4190
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A clear de Haas-van Alphen (dHvA) oscillation has been found in LaP doped with 2 atomic percent of Ce under a pulsed field up to 30 Tesla (T) at liquid helium temperature. The oscillation is superimposed on the paramagnetic saturation curve of Ce which does not show the Kondo effect. The Fourier spectrum of the magnetization curves gives an extremal cross-sectional area of the Fermi surface of 0.01 angstrom-2, which is about a half-value of CeP. The ground state of the Ce atom is investigated by electron spin resonance (ESR) and a nearly isotropic g-value of 1.37 is obtained, in agreement with the theoretical expectation for GAMMA7, while the g-value of field-cooled CeP is 2.93 which is close to that of GAMMA8. The discrepancy is discussed using the neutron diffraction data.
引用
收藏
页码:4190 / 4193
页数:4
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