TERRACING AND STEP BUNCHING IN INTERFACES OF MOLECULAR-BEAM EPITAXY-GROWN (AL)GAAS MULTILAYERS

被引：13

作者：

ALBREKTSEN, O

MEIER, HP

ARENT, DJ

SALEMINK, HWM

机构：

[1] SWISS FED INST TECHNOL,INST QUANTUM ELECTR,CH-8093 ZURICH,SWITZERLAND

[2] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 17期

关键词：

D O I：

10.1063/1.109466

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth terraces in molecular beam epitaxy-grown AlxGa1-xAs multilayers are observed on the ultrahigh vacuum cleaved (110) cross-sectional plane using scanning tunneling microscopy. Under regular growth conditions on 2-degrees off oriented vicinal surfaces, we observe step bunching of 2-8 atomic layers and a corresponding extension of the terrace length instead of monolayer steps. These results demonstrate that the roughness of quantum confinement layers can be studied down to the atomic scale in a direct way.

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页码：2105 / 2107

页数：3

相关论文

共 15 条

[1] SECONDARY ION MASS-SPECTROMETRY STUDY OF OXYGEN ACCUMULATION AT GAAS ALGAAS INTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

ACHTNICH, T ;

BURRI, G ;

PY, MA ;

ILEGEMS, M .

APPLIED PHYSICS LETTERS, 1987, 50 (24) :1730-1732

[2] STUDY OF OXYGEN INCORPORATION IN ALGAAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ACHTNICH, T ;

BURRI, G ;

ILEGEMS, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2537-2541

[3] TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACES [J].

ALBREKTSEN, O ;

ARENT, DJ ;

MEIER, HP ;

SALEMINK, HWM .

APPLIED PHYSICS LETTERS, 1990, 57 (01) :31-33

[4] CATHODOLUMINESCENCE ATOMIC SCALE IMAGES OF MONOLAYER ISLANDS AT GAAS/GAALAS INTERFACES [J].

BIMBERG, D ;

CHRISTEN, J ;

FUKUNAGA, T ;

NAKASHIMA, H ;

MARS, DE ;

MILLER, JN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1191-1197

[5] III-V HETEROSTRUCTURE INTERFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

COLEMAN, JJ ;

COSTRINI, G ;

JENG, SJ ;

WAYMAN, CM .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :428-431

[6] ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J].

FEENSTRA, RM ;

STROSCIO, JA ;

TERSOFF, J ;

FEIN, AP .

PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1192-1195

[7] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF GROWTH INTERRUPTION EFFECT ON ALAS/GAAS INTERFACIAL STRUCTURE DURING MOLECULAR-BEAM EPITAXY [J].

IKARASHI, N ;

TANAKA, M ;

SAKAKI, H ;

ISHIDA, K .

APPLIED PHYSICS LETTERS, 1992, 60 (11) :1360-1362

[8] DETERMINATION OF THE ATOMIC CONFIGURATION AT SEMICONDUCTOR INTERFACES [J].

OURMAZD, A ;

TSANG, WT ;

RENTSCHLER, JA ;

TAYLOR, DW .

APPLIED PHYSICS LETTERS, 1987, 50 (20) :1417-1419

[9] CHEMICAL MAPPING OF SEMICONDUCTOR INTERFACES AT NEAR-ATOMIC RESOLUTION [J].

OURMAZD, A ;

TAYLOR, DW ;

CUNNINGHAM, J .

PHYSICAL REVIEW LETTERS, 1989, 62 (08) :933-936

[10] TUNNELING MICROSCOPY AND SPECTROSCOPY ON CROSS-SECTIONS OF MOLECULAR-BEAM-EPITAXY-GROWN (AI)GAAS MULTILAYERS [J].

SALEMINK, H ;

ALBREKTSEN, O .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :779-782