THE GROWTH OF GAAS ON SI BY MBE

被引：45

作者：

KOCH, SM ^{[1
]}

ROSNER, SJ ^{[1
]}

HULL, R ^{[1
]}

YOFFE, GW ^{[1
]}

HARRIS, JS ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90392-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：205 / 213

页数：9

共 12 条

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[6]

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[7]

KOCH SM, 1986, IN PRESS HETEROEPITA, V67

[8] GROWTH OF SINGLE DOMAIN GAAS ON 2-INCH SI(100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

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[9]

ROSNER SJ, IN PRESS

[10] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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UMENO, M .

APPLIED PHYSICS LETTERS, 1986, 48 (06) :413-414

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