LASER-INDUCED TRENCH ETCHING OF GAAS IN AQUEOUS KOH SOLUTION

被引:12
|
作者
LEE, C
TAKAI, M
YADA, T
KATO, K
NAMBA, S
机构
[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN
[2] GLORY LTD,HIMEJI,HYOGO 670,JAPAN
来源
关键词
81.40; 82.65;
D O I
10.1007/BF00324316
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Maskless etching of n-type GaAs in a KOH aqueous solution by irradiation of an argonion laser has been investigated to obtain high etching rates and aspect-ratios of etched grooves. High etching rates of up to 805 μm/s and an aspect ratio of 8 have been achieved by a single scan of a laser beam. Microprobe photoluminescence (PL), Raman scattering, and Auger electron spectroscopy (AES) measurements were carried out on the trench surface to characterize damage induced by laser wet etching. © 1990 Springer-Verlag.
引用
收藏
页码:340 / 343
页数:4
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