TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF THE HIGH ELECTRON-MOBILITY TRANSISTOR

被引：41
|
作者：
WIDIGER, D [1 ]
HESS, K [1 ]
COLEMAN, JJ [1 ]
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 07期
关键词：
D O I：
10.1109/EDL.1984.25913
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：266 / 269
页数：4
相关论文
共 50 条
  • [41] V-SHAPED GATE HIGH ELECTRON-MOBILITY TRANSISTOR (VHEMT)
    ISHII, M
    MATSUMOTO, K
    MOROZUMI, H
    SUGIYAMA, Y
    SAKAMOTO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (1A-B): : L36 - L38
  • [42] DC AND TRANSMISSION-LINE MODELS FOR A HIGH ELECTRON-MOBILITY TRANSISTOR
    HUANG, DH
    LIN, HO
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (09) : 1361 - 1370
  • [43] Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility
    Chu, Min
    Koehler, Andrew D.
    Gupta, Amit
    Nishida, Toshikazu
    Thompson, Scott E.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (10)
  • [44] PSEUDOMORPHIC GAINP SCHOTTKY DIODE AND HIGH ELECTRON-MOBILITY TRANSISTOR ON INP
    LOUALICHE, S
    GINUDI, A
    LECORRE, A
    LECROSNIER, D
    VAUDRY, C
    HENRY, L
    GUILLEMOT, C
    APPLIED PHYSICS LETTERS, 1989, 55 (20) : 2099 - 2101
  • [45] ONE-DIMENSIONAL TRANSPORT IN QUANTUM-WELL WIRE-HIGH ELECTRON-MOBILITY TRANSISTOR
    YUH, PF
    WANG, KL
    APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1738 - 1740
  • [46] MONOLITHIC INTEGRATION OF A GAAS SCHOTTKY PHOTODIODE WITH A HIGH ELECTRON-MOBILITY TRANSISTOR
    GOUY, JP
    VILCOT, JP
    RACZY, L
    DECOSTER, D
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : C581 - C581
  • [47] Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor
    Wang, X. (xlwang@semi.ac.cn), 1600, Elsevier Ltd (605):
  • [48] Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor
    Li, Wei
    Wang, Xiaoliang
    Qu, Shenqi
    Wang, Quan
    Xiao, Hongling
    Wang, Cuimei
    Peng, Enchao
    Hou, Xun
    Wang, Zhanguo
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 605 : 113 - 117
  • [49] Origin of the Kink Effect in AlInN/GaN High Electron-Mobility Transistor
    Khade, Ramdas P.
    Sarkar, Sujan
    DasGupta, Amitava
    DasGupta, Nandita
    JOURNAL OF APPLIED PHYSICS, 2021, 130 (20)
  • [50] DEVICE CHARACTERISTICS OF SHORT CHANNEL HIGH ELECTRON-MOBILITY TRANSISTOR (HEMT)
    NISHIUCHI, K
    MIMURA, T
    KURODA, S
    HIYAMIZU, S
    NISHI, H
    ABE, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1569 - 1570
12345