A COMPARISON OF INTERNAL GETTERING DURING BIPOLAR, CMOS, AND CCD (HIGH, MEDIUM, LOW-TEMPERATURE) PROCESSES

被引：32

作者：

JASTRZEBSKI, L

SOYDAN, R

MCGINN, J

KLEPPINGER, R

BLUMENFELD, M

GILLESPIE, G

ARMOUR, N

GOLDSMITH, B

HENRY, W

VECRUMBA, S

机构：

[1] RCA CORP,DIV SOLID STATE,PALM BEACH GARDENS,FL 33410

[2] RCA CORP,DIV SOLID STATE,FINDLAY,OH 45840

[3] RCA CORP,DIV NEW PROD,LANCASTER,PA 17604

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 04期

关键词：

D O I：

10.1149/1.2100559

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1018 / 1025

页数：8

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