ELECTRON-SPECTRA AND INTRINSIC ABSORPTION OF HEAVILY DOPED N-GAAS

被引:0
作者
LEVKOV, AN [1 ]
LOMAKIN, GG [1 ]
机构
[1] AM GORKII STATE UNIV,SVERDLOVSK,USSR
来源
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 1975年 / 08期
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中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:30 / 35
页数:6
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[41]   DELTA-DOPED OHMIC CONTACTS TO N-GAAS [J].
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