共 50 条
[42]
OPTICAL-ABSORPTION BY FREE HOLES IN HEAVILY DOPED GAAS
[J].
PHYSICAL REVIEW B,
1991, 44 (03)
:1128-1133
[44]
Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs
[J].
Modern Electronic Materials,
2020, 6 (03)
:85-89
[46]
Proton implantation induced damage to heavily doped n-GaAs as envisaged by charge deep-level transient spectroscopy
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1997, 162 (02)
:547-557
[48]
The influence of anodic oxide on the electron concentration in n-GaAs
[J].
Russian Physics Journal,
2014, 56
:984-989
[50]
Infrared spectroscopy and electroreflectance in the region of fundamental optical transition E-0 of heavily doped n-GaAs (100)
[J].
FUNCTIONAL MATERIALS,
2009, 16 (01)
:23-28