HETEROEPITAXIAL GROWTH OF INP DIRECTLY ON SI BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：36

作者：

LEE, MK

WUU, DS

TUNG, HH

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 24期

关键词：

D O I：

10.1063/1.97728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1725 / 1726

页数：2

共 7 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].

AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11) :L843-L845

[2] INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC-PROPERTIES OF SIO2/INP MISFETS [J].

GEIB, KM ;

GOODNICK, SM ;

LIN, DY ;

GANN, RG ;

WILMSEN, CW ;

WAGER, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :516-521

[3] OVERLENGTH MODES OF INP TRANSFERRED-ELECTRON DEVICES [J].

JONES, D ;

REES, HD .

ELECTRONICS LETTERS, 1974, 10 (12) :234-235

[4] ADDUCTS IN THE GROWTH OF III-V-COMPOUNDS [J].

MOSS, RH .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :78-87

[5] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SAKAI, S ;

SOGA, T ;

TAKEYASU, M ;

UMENO, M .

APPLIED PHYSICS LETTERS, 1986, 48 (06) :413-414

[6] EPITAXIAL GAAS GROWN DIRECTLY ON (100)SI BY LOW-PRESSURE MOVPE USING LOW-TEMPERATURE PROCESSING [J].

SHASTRY, SK ;

ZEMON, S ;

OREN, M .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :503-508

[7]

WANG WI, 1984, APPL PHYS LETT, V44, P44

← 1 →