A REFINED THEORETICAL-ANALYSIS OF PHOTOFIELD-EFFECT MEASUREMENTS IN A-SI-H THIN-FILM TRANSISTORS

被引：5

作者：

SCHROPP, REI

HARM, AO

VERWEY, JF

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 53卷 / 05期

关键词：

D O I：

10.1080/13642818608240657

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：431 / 444

页数：14

共 16 条

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[9] THE DETERMINATION OF CHARACTERISTIC PARAMETERS BY THE TEMPERATURE-DEPENDENT FIELD-EFFECT IN A-SI-H THIN-FILM TRANSISTORS [J].

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[10] ON THE QUALITY OF CONTACTS IN A-SI-H STAGGERED ELECTRODE THIN-FILM TRANSISTORS [J].

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