共 29 条
[1]
CHUNG SK, 1987, IEEE T ELECTRON DEV, V34, P149, DOI 10.1109/T-ED.1987.22900
[4]
MEASUREMENT OF POTENTIAL AT SEMICONDUCTOR INTERFACES BY ELECTRON-SPECTROSCOPY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1983, 1 (02)
:320-327
[6]
ELEMENTARY THEORY OF HETEROJUNCTIONS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1977, 14 (04)
:1016-1021
[7]
TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (04)
:1068-1073
[8]
ELECTRONIC AND MICROSTRUCTURAL PROPERTIES OF DISORDER-INDUCED GAP STATES AT COMPOUND SEMICONDUCTOR-INSULATOR INTERFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (04)
:1097-1107
[9]
ON THE CHEMISTRY OF PASSIVATED OXIDE-INP INTERFACES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (04)
:1108-1112