THE ROLE OF FILM STRESS ON THE RATE OF SILICON OXIDATION AT LOW-TEMPERATURE

被引：0
|
作者：
MURRAY, P [1 ]
CAREY, GF [1 ]
机构：
[1] UNIV TEXAS,DEPT AEROSPACE ENGN & ENGN MECH,AUSTIN,TX 78712
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 08期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C376 / C376
页数：1
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