POLYCRYSTALLINE SI THIN-FILM SOLAR-CELL PREPARED BY SOLID-PHASE CRYSTALLIZATION (SPC) METHOD

被引：17

作者：

MATSUYAMA, T

BABA, T

TAKAHAMA, T

TSUDA, S

NAKANO, S

机构：

[1] SANYO Electric Co., Ltd. New Materials Research Center, Hirakata, Osaka, 573

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 34卷 / 1-4期

关键词：

D O I：

10.1016/0927-0248(94)90052-3

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The solid phase crystallization (SPC) method has been studied for fabricating polycrystalline (poly) Si thin films for solar cells. The approach was to optimize the ''partial doping structure'' (nondoped a-Si/phosphorus(P)-doped a-Si) which we proposed as a starting structure before SPC. A conversion efficiency of 6.3% was obtained by using nondoped a-Si with a large structural disorder. This cell showed a collection efficiency of 51% at a wavelength of 900 nm. In order to significantly reduce the incubation time which is the important factor for the enlargement of the grain size, P doping of more than 10(20) cm(-3) was required for the P-doped layer.

引用

页码：285 / 289

页数：5

共 8 条

[1] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].