MECHANISMS OF VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON

被引：457

作者：

VIAL, JC ^{[1
]}

BSIESY, A ^{[1
]}

GASPARD, F ^{[1
]}

HERINO, R ^{[1
]}

LIGEON, M ^{[1
]}

MULLER, F ^{[1
]}

ROMESTAIN, R ^{[1
]}

MACFARLANE, RM ^{[1
]}

机构：

[1] IBM CORP,ALMADEN RES CTR,SAN JOSE,CA 95120

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.45.14171

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-porosity porous silicon, after electrochemical oxidation, is a stable and highly reproducible luminescent material with a luminescence quantum efficiency as high as 3% at room temperature. Luminescence decay rates as long as several hundreds of microseconds show that radiative and nonradiative processes both have low efficiencies even at room temperature. This shows that confinement of carriers inside nanometer-sized crystallites does not have a noticeable effect on indirect-band-gap selection rules but restricts strongly the different processes for nonradiative deexcitation. An analysis of the dependence of the nonradiative-decay rates on carrier confinement in terms of the tunneling of carriers through silicon oxide barriers surrounding the confined zone accounts well for our experimental results with an average barrier thickness of 5 nm. This tunneling model is also used to explain successfully the increase in quantum efficiency with the increase of the level of oxidation.

引用

页码：14171 / 14176

页数：6

共 10 条

[1] PHOTOLUMINESCENCE OF HIGH POROSITY AND OF ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS [J].