SHALLOW IMPURITY IMPACT IONIZATION TRANSIENTS IN N-TYPE INP AND GAAS

被引：13
作者：
DARGYS, A
CESNA, A
KUNDROTAS, J
机构：
[1] Semicond. Phys. Inst., Acad. of Sci., Vilnius
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 02期
关键词：
D O I：
10.1088/0268-1242/7/2/006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The ionization dynamics of shallow donors in stepped electric fields is investigated in the nanosecond time-scale by monitoring the current transients in InP and GaAs epitaxial layers. Electron multiplication in the conduction band is analysed within the rate equation formalism, taking into account the ground state as well as the first excited state of the donor atom. Various ionization and recombination mechanisms, which can influence the dynamics of impact ionization, are considered. The dependence of the impact ionization and excitation coefficients on electric field strength has been deduced from a comparison of the experimental and theoretical current transients.
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页码：210 / 217
页数：8
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