INSITU INVESTIGATION OF THE NUCLEATION OF MICROCRYSTALLINE SI

被引：16

作者：

COLLINS, RW

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 13期

关键词：

D O I：

10.1063/1.96686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：843 / 845

页数：3

共 11 条

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[2]

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[3]

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[4] THE NUCLEATION AND GROWTH OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON [J].

COLLINS, RW ;

PAWLOWSKI, A .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1160-1166

[5] AN ELLIPSOMETRY STUDY OF A HYDROGENATED AMORPHOUS-SILICON BASED N-I STRUCTURE [J].

COLLINS, RW ;

CLARK, AH ;

GUHA, S ;

HUANG, CY .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4566-4571

[6] GROWTH OF HYDROGENATED AMORPHOUS-SILICON DUE TO CONTROLLED ION-BOMBARDMENT FROM A PURE SILANE PLASMA [J].

DREVILLON, B ;

PERRIN, J ;

SIEFERT, JM ;

HUC, J ;

LLORET, A ;

DEROSNY, G ;

SCHMITT, JPM .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :801-803

[7] SURFACE-ANALYSIS DURING VAPOR-PHASE GROWTH [J].

HOTTIER, F ;

THEETEN, JB .

JOURNAL OF CRYSTAL GROWTH, 1980, 48 (04) :644-654

[8]

KUMAR S, UNPUB APPL PHYS LETT

[9] SUBSTRATE-TEMPERATURE DEPENDENCE OF MICROCRYSTALLINITY IN PLASMA-DEPOSITED, BORON-DOPED HYDROGENATED SILICON ALLOYS [J].

RAJESWARAN, G ;

KAMPAS, FJ ;

VANIER, PE ;

SABATINI, RL ;

TAFTO, J .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1045-1047

[10]

VEPRECK S, 1981, J PHYS C S10, V4, P251

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