MAGNETO-POLARONS IN A TWO-DIMENSIONAL ELECTRON INVERSION LAYER ON INSB

被引：121

作者：

HORST, M

MERKT, U

KOTTHAUS, JP

机构：

来源：

PHYSICAL REVIEW LETTERS | 1983年 / 50卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.50.754

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：754 / 757

页数：4

共 14 条

[1]

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[5]

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[7] CYCLOTRON-RESONANCE STUDIES OF THE ELECTRON-PHONON INTERACTION IN INVERSION-LAYERS ON P-INSB [J].

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[8] MAGNETO-OSCILLATORY EXCITATION SPECTRA OF SHALLOW ACCEPTOR IMPURITIES IN INSB AND GE [J].

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[9]

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[10] PLASMA-ENHANCED CHEMICALLY VAPOUR-DEPOSITED SILICON DIOXIDE FOR METAL-OXIDE-SEMICONDUCTOR STRUCTURES ON INSB [J].

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