DOUBLE-IMPLANTED GAAS COMPLEMENTARY JFETS

被引：29
|
作者：
ZULEEG, R
NOTTHOFF, JK
TROEGER, GL
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 01期
关键词：
D O I：
10.1109/EDL.1984.25817
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：21 / 23
页数：3
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