DEFECTS FORMED BY IMPLANTATION OF SILICON IONS IN N-TYPE SILICON NEAR SI-SIO2 INTERFACE

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作者：
GALKIN, GN
VAVILOV, VS
ABBASOVA, RU
BOBROVA, EA
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 07期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：744 / 746
页数：3
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