AUTODOPING OF GAAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY ON SILICON SUBSTRATES

被引：14

作者：

AZOULAY, R

DRAIDIA, N

GAO, Y

DUGRAND, L

LEROUX, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 24期

关键词：

D O I：

10.1063/1.101090

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2402 / 2404

页数：3

共 11 条

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[7]

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