ELECTRONIC-ENERGY LEVELS IN INXGA1-XAS/INP STRAINED-LAYER SUPERLATTICES

被引：44
作者：
GERSHONI, D
VANDENBERG, JM
HAMM, RA
TEMKIN, H
PANISH, MB
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 36卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.36.1320
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：1320 / 1323
页数：4
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