Effect of alkaline slurry on the electric character of the pattern Cu wafer

被引：5

作者：

Hu Yi ^{[1
]}

Liu Yuling ^{[1
]}

Liu Xiaoyan ^{[1
]}

He Yangang ^{[1
]}

Wang Liran ^{[1
]}

Zhang Baoguo ^{[1
]}

机构：

[1] Hebei Univ Technol, Inst Microelect, Tianjin 300130, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2011年 / 32卷 / 07期

关键词：

resistance; capacitance; leakage current; alkaline slurry; chemical mechanical polish (CMP);

D O I：

10.1088/1674-4926/32/7/076002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

For process integration considerations, we will investigate the impact of chemical mechanical polishing (CMP) on the electrical characteristics of the pattern Cu wafer. In this paper, we investigate the impacts of the CMP process with two kinds of slurry, one of which is acid slurry of SVTC and the other is FA/O alkaline slurry purchased from Tianjin Jingling Microelectronic Material Limited. Three aspects were investigated: resistance, capacitance and leakage current. The result shows that after polishing by the slurry of FA/O, the resistance is lower than the SVTC. After polishing by the acid slurry and FA/O alkaline slurry, the difference in capacitance is not very large. The values are 0.1 nF and 0.12 nF, respectively. The leakage current of the film polished by the slurry of FA/O is 0.01 nA, which is lower than the slurry of SVTC. The results show that the slurry of FA/O produced less dishing and oxide loss than the slurry of SVTC.

引用

页数：3

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