USE OF CHANNELING TECHNIQUE AND CALCULATED ANGULAR-DISTRIBUTIONS TO LOCATE BR IMPLANTED INTO FE SINGLE-CRYSTALS

被引：68
作者：
ALEXANDER, RB
CALLAGHAN, PT
POATE, JM
机构：
[1] UNIV OXFORD, CLARENDON LAB, OXFORD, ENGLAND
[2] ATOM ENERGY RES ESTAB, NUCL PHYS DIV, HARWELL, ENGLAND
[3] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
来源：
PHYSICAL REVIEW B | 1974年 / 9卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.9.3022
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3022 / 3043
页数：22
相关论文
共 46 条
[1]  
ABEL F, TO BE PUBLISHED
[2]  
Alexander R. B., 1970, European conference on ion implantation, P181
[3]   OBSERVATION OF MULTIPLE PEAKING AND A POSSIBLE ENHANCED DIFFUSION EFFECT IN CHANNELING ANGULAR-DISTRIBUTIONS [J].
ALEXANDER, RB ;
CALLAGHAN, PT .
PHYSICS LETTERS A, 1973, A 45 (05) :379-380
[4]   INTERPRETATION OF CHANNELLED-ION BEAM MEASUREMENTS FOR FOREIGN ATOM LOCATION IN CRYSTALS [J].
ALEXANDER, RB ;
DEARNALEY, G ;
MORGAN, DV ;
POATE, JM .
PHYSICS LETTERS A, 1970, A 32 (05) :365-+
[5]  
ALEXANDER RB, 1971, THESIS U OXFORD
[6]  
ALEXANDER RB, 1973, P INT C ION IMPLANTA, P477
[7]  
ALEXANDER RB, 1972, RADIAT EFF, V12, P211
[8]  
ALEXANDER RD, UNPUBLISHED
[9]  
Andersen J. U., 1971, Radiation Effects, V7, P25, DOI 10.1080/00337577108232561
[10]  
Andersen J.U., 1972, RADIAT EFF, V12, P219
12345