ENERGY RELAXATION OF ELECTRONS IN (100) N-CHANNEL OF A SI-MOSFET .2. SURFACE PHONON TREATMENT

被引：17
作者：
KROWNE, CM [1 ]
HOLMKENN.JW [1 ]
机构：
[1] UNIV CALIF,ELECT SCI & ENGN DEPT,LOS ANGELES,CA 90024
来源：
SURFACE SCIENCE | 1974年 / 46卷 / 01期
关键词：
D O I：
10.1016/0039-6028(74)90250-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：232 / 250
页数：19
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