UNDAMPED RHEED OSCILLATIONS DURING SI AND GE HOMOEPITAXY

被引：0

作者：

MARKOV, VA ^{[1
]}

PCHELYAKOV, OP ^{[1
]}

SOKOLOV, LV ^{[1
]}

STENIN, SI ^{[1
]}

STOYANOV, S ^{[1
]}

机构：

[1] BULGARIAN ACAD SCI,INST PHYS CHEM,BU-1113 SOFIA,BULGARIA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 10卷 / 02期

关键词：

D O I：

10.1016/0749-6036(91)90217-F

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new MBE technique based on the possibility to maintain undamped RHEED oscillations by periodic increase of surface supersaturation synchronized with oscillations is presented. Surface supersaturation can be increased by any way suitable for any particular case. The technique has been referred to by the authors as MBE with nucleation synchronization (MBE-NS) and allows epistructures of any thickness to be grown with in situ control of their properties by RHEED. It can be applied both to elementary semiconductors and to compounds like A3B5, A2B6 etc. © 1991.

引用

页码：135 / 137

页数：3

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