THE EFFECTS OF THERMAL HISTORY DURING GROWTH ON O-PRECIPITATION IN CZOCHRALSKI SILICON

被引：29
作者：
FRAUNDORF, G
FRAUNDORF, P
CRAVEN, RA
FREDERICK, RA
MOODY, JW
SHAW, RW
机构：
[1] Monsanto Electronic Materials Co,, St. Louis, MO, USA, Monsanto Electronic Materials Co, St. Louis, MO, USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 07期
关键词：
Compendex;
D O I：
10.1149/1.2114194
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
15
引用
收藏
页码：1701 / 1704
页数：4
相关论文
共 15 条
[1]   EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J].
BOURRET, A ;
THIBAULTDESSEAUX, J ;
SEIDMAN, DN .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :825-836
[2]   EFFECTS OF HEAT-TREATMENT ON DISLOCATION-FREE OXYGEN-CONTAINING SILICON-CRYSTALS [J].
CAPPER, P ;
JONES, AW ;
WALLHOUSE, EJ ;
WILKES, JG .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1646-1655
[3]  
CHAN IYT, 1982, 40TH ANN P EL MICR S, P500
[4]  
CRAVEN RA, 1981, SEMICONDUCTOR SILICO, P254
[5]  
FRAUNDORF P, 1985, ELECTROCHEMICAL SOC, P436
[6]   OXIDE MICRO-PRECIPITATES IN AS-GROWN CZ SILICON [J].
INOUE, N ;
OSAKA, J ;
WADA, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) :2780-2788
[7]   MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].
KAISER, W ;
FRISCH, HL ;
REISS, H .
PHYSICAL REVIEW, 1958, 112 (05) :1546-1554
[8]  
NAKANISHI H, 1983, J CRYST GROWTH, V60, P80
[9]  
OSAKA J, 1980, APPL PHYS LETT, V34, P288
[10]   OXYGEN-RELATED THERMAL DONORS IN SILICON - A NEW STRUCTURAL AND KINETIC-MODEL [J].
OURMAZD, A ;
SCHROTER, W ;
BOURRET, A .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1670-1681
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