PHOTODEPOSITION OF RU ON INP AND GALNPAS - CATALYTIC AND ELECTRONIC-PROPERTIES

被引：6

作者：

LEWERENZ, HJ

MICHAELIS, R

机构：

[1] Hahn-Meitner-Inst Berlin, Berlin, West Ger, Hahn-Meitner-Inst Berlin, Berlin, West Ger

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 04期

关键词：

SEMICONDUCTING GALLIUM COMPOUNDS - Substrates - SEMICONDUCTING INDIUM COMPOUNDS - Substrates - SEMICONDUCTOR DEVICES - Materials;

D O I：

10.1149/1.2095830

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The authors restrict this investigation to Ru/InP and Ru/GaInPAs contacts. The large grain polycrystalline quaternary semiconductor has been chosen because of differences in surface chemistry. Experimental data show that the typical current enhancement upon metallization is found. The increase in catalytic activity is larger for InP. A somewhat lower overall photoactivity is noted for GaInPAs.

引用

页码：913 / 916

页数：4

共 36 条

[31]

SCHINDLER M, IN PRESS

[32] ADSORPTION - DESORPTION-KINETICS OF H-2 FROM CLEAN AND SULFUR COVERED RU(001) [J].

SCHWARZ, JA .

SURFACE SCIENCE, 1979, 87 (02) :525-538

[33] MODEL STUDIES ON BIMETALLIC CU-RU CATALYSTS .2. ADSORPTION OF HYDROGEN [J].

SHIMIZU, H ;

CHRISTMANN, K ;

ERTL, G .

JOURNAL OF CATALYSIS, 1980, 61 (02) :412-429

[34] METAL-GASE AND METAL-INP INTERFACES - SCHOTTKY-BARRIER FORMATION AND INTERFACIAL REACTIONS [J].

WILLIAMS, RH ;

MCKINLEY, A ;

HUGHES, GJ ;

MONTGOMERY, V ;

MCGOVERN, IT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :594-598

[35] EFFECT OF VARIOUS SUBSTRATES ON THE HYDROGEN SENSITIVITY OF PALLADIUM-SEMICONDUCTOR DIODES [J].

YAMAMOTO, N ;

TONOMURA, S ;

MATSUOKA, T ;

TSUBOMURA, H .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6227-6330

[36] STUDY ON A PALLADIUM-TITANIUM OXIDE SCHOTTKY DIODE AS A DETECTOR FOR GASEOUS COMPONENTS [J].

YAMAMOTO, N ;

TONOMURA, S ;

MATSUOKA, T ;

TSUBOMURA, H .

SURFACE SCIENCE, 1980, 92 (2-3) :400-406

← 1 2 3 4 →