PHOTODEPOSITION OF RU ON INP AND GALNPAS - CATALYTIC AND ELECTRONIC-PROPERTIES

被引：6
作者：
LEWERENZ, HJ
MICHAELIS, R
机构：
[1] Hahn-Meitner-Inst Berlin, Berlin, West Ger, Hahn-Meitner-Inst Berlin, Berlin, West Ger
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 04期
关键词：
SEMICONDUCTING GALLIUM COMPOUNDS - Substrates - SEMICONDUCTING INDIUM COMPOUNDS - Substrates - SEMICONDUCTOR DEVICES - Materials;
D O I：
10.1149/1.2095830
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The authors restrict this investigation to Ru/InP and Ru/GaInPAs contacts. The large grain polycrystalline quaternary semiconductor has been chosen because of differences in surface chemistry. Experimental data show that the typical current enhancement upon metallization is found. The increase in catalytic activity is larger for InP. A somewhat lower overall photoactivity is noted for GaInPAs.
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页码：913 / 916
页数：4
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