DETERMINATION OF HOLE MOBILITY IN HIGH-RESISTIVITY DIFFUSION LAYERS IN SILICON

被引：0

作者：

ILIEVA, MN ^{[1
]}

机构：

[1] INST MICROELECTR,SOFIA,BULGARIA

来源：

DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE | 1977年 / 30卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：199 / 202

页数：4

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ILIEVA MN, 1976, DOKL BOLG AKAD NAUK, V29, P33

[6] LONG CHANNEL MOS TRANSISTOR (LOMOST) AS A CURRENT STABILIZER [J].

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KASSABOV J, 1975, ELECTRON TECHNOLOGY

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[9]

KASSABOV JD, 1975, BULG J PHYSICS, V2, P5

[10] SURFACE TRANSPORT THEORY [J].

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