ZN DIFFUSION IN GAAS UNDER CONSTANT AS PRESSURE

被引：20

作者：

LUQUE, A ^{[1
]}

MARTIN, J ^{[1
]}

ARAUJO, GL ^{[1
]}

机构：

[1] UNIV POLITEC MADRID,ESCUEL TEC SUPER INGENIEROS TELECOMMUN,LAB SEMICOND,MADRID,SPAIN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 02期

关键词：

D O I：

10.1149/1.2132797

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：249 / 254

页数：6

共 18 条

[1] THE DIFFUSION OF IONIZED IMPURITIES IN SEMICONDUCTORS [J].

ALLEN, JW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) :134-&

[2] DIFFUSION OF ZINC IN GALLIUM ARSENIDE [J].

ALLEN, JW ;

CUNNELL, FA .

NATURE, 1958, 182 (4643) :1158-1158

[3]

BARROW GH, 1972, QUIMICA FISICA, P435

[4]

BLANC J, 1974, J APPL PHYS, V45, P1948, DOI 10.1063/1.1663527

[5]

BOOMGAARD J, 1957, PHILIPS RES REP, V12, P127

[6] DIFFUSION MECHANISM OF ZN IN GAAS + GAP BASED ON ISOCONCENTRATION DIFFUSION EXPERIMENTS [J].

CHANG, LL ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1960-&

[7]

CRANK J, 1970, MATH DIFFUSION, P148

[8] ISOCONCENTRATION DIFFUSION OF ZINC IN GAAS AT 1000 DEGREES C [J].

KADHIM, MAH ;

TUCK, B .

JOURNAL OF MATERIALS SCIENCE, 1972, 7 (01) :68-&

[9]

KENDALL DL, 1961, AIEEIRE DEVICE RESEA

[10] AN AC BRIDGE FOR SEMICONDUCTOR RESISTIVITY MEASUREMENTS USING A 4-POINT PROBE [J].

LOGAN, MA .

BELL SYSTEM TECHNICAL JOURNAL, 1961, 40 (03) :885-+

← 1 2 →