CARRIER TEMPERATURE EFFECTS IN A P-N-JUNCTION

被引：4

作者：

STOKOE, TY ^{[1
]}

PARROTT, JE ^{[1
]}

机构：

[1] UNIV WALES, INST SCI & TECHNOL, DEPT APPL PHYS & ELECTR, CARDIFF, GLAMORGANSHIRE, WALES

来源：

关键词：

D O I：

10.1016/0038-1101(75)90162-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：811 / 814

页数：4

共 6 条

[1] CARRIER HEATING EFFECTS IN JUNCTIONS AT VERY LOW CURRENTS [J].

BERZ, F .

[2]

GORDEEV GV, 1962, SOV PHYS-SOL STATE, V4, P228

[3]

GRIBNIKOV ZS, 1962, SOV PHYS-SOL STATE, V3, P2479

[4] SPATIAL VARIATION OF QUASI-FERMI POTENTIALS IN P-N JUNCTIONS [J].

SAH, CT .

STOKOE, TY ;

PARROTT, JE .

[6] DIFFUSION OF HOT AND COLD ELECTRONS IN SEMICONDUCTOR BARRIERS [J].

STRATTON, R .

PHYSICAL REVIEW, 1962, 126 (06) :2002-&