CRYSTALLOGRAPHIC SELECTIVE GROWTH OF GAAS BY ATOMIC LAYER EPITAXY

被引：30
作者：
ISSHIKI, H
AOYAGI, Y
SUGANO, T
IWAI, S
MEGURO, T
机构：
[1] Frontier Research Program, Institute of Physical and Chemical Research (RIKEN), Wako-shi, Saitama 351-01
[2] Institute of Physical and Chemical Research (RIKEN), Wako-shi, Saitama 351-01
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 11期
关键词：
D O I：
10.1063/1.110738
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We found high crystallographic selectivity in atomic layer epitaxy (ALE) growth of GaAs, in comparison with other epitaxial growth methods. In the temperature dependence of the GaAs growth rate, no GaAs growth on the GaAs (111) A and (110) planes was observed in the high temperature range under the condition of GaAs ALE growth on GaAs (100) plane. Also we discussed the mechanism of GaAs growth selectivity, which was believed to be caused by growth limitation due to As desorption. Due to the self-limiting effect and the high selectivity of ALE growth, trapezoidal-shaped GaAs/AlGaAs quantum wire structures, with 20 nm thickness and 50 nm width, were successfully realized.
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收藏
页码：1528 / 1530
页数：3
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