MANGANESE-BASED OHMIC CONTACT TO P-GAAS

被引：0

作者：

KALKUR, TS

LU, YC

机构：

[1] Department of Electrical and Computer Engineering, University of Colorado at Colorado Springs, Colorado Springs

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 11期

关键词：

D O I：

10.1149/1.2085433

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Mn-In-Co, Mn-In-Pt, and Mn-Pt metallizations are used to form ohmic contacts on Be-implanted, rapid thermally annealed GaAs. The rapid thermal alloying of contact metallizations were performed in a nitrogen atmosphere in the temperature range of 350 to 800-degrees-C for 5 s. The as-deposited metallizations showed rectifying contacts and were found to be ohmic at an annealing temperature of 450-degrees-C. The contact resistivity was found to be dependent on the annealing temperature. The In-Mn-Pt and Mn-Pt metallization systems showed similar contact resistivities (1-2 x 10(-5) OMEGA . cm-2) where as Mn-In-Co metallizations showed higher contact resistivity (5 x 10(-4) OMEGA . cm-2) for an annealing temperature of 700-degrees-C and time 5 s in forming gas atmosphere. The surface morphologies of the contacts as observed in a scanning electron microscope were smooth even at an annealing temperature of 700-degrees-C. The interdiffusion of metallization components was studied by Auger electron spectroscopy.

引用

页码：3456 / 3459

页数：4

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