共 50 条
- [1] INVESTIGATION OF PROCESSES OF RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN EPITAXIAL GALLIUM-ARSENIDE FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (08): : 781 - 784
- [2] RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE POINT AND EXTENDED DEFECTS IN SEMICONDUCTORS, 1989, 202 : 243 - 256
- [3] FAST RECOMBINATION CHANNELS IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (12): : 1499 - 1502
- [7] RECOMBINATION PROPERTIES OF GALLIUM-ARSENIDE EPITAXIAL STRUCTURES ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 60 (06): : 170 - 171
- [8] RADIATIVE RECOMBINATION IN EPITAXIAL COMPENSATED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1718 - 1725
- [9] INSTABILITY OF RECOMBINATION RADIATION IN SEMIINSULATING GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (04): : 639 - +
- [10] IMPURITY AND DEFECT LEVELS (EXPERIMENTAL) IN GALLIUM-ARSENIDE ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS, 1983, 61 : 63 - 160