CONTRIBUTION OF DIFFUSION-INDUCED STRUCTURAL-CHANGES TO THE ANISOTROPY OF THE PHOSPHORUS DIFFUSION IN SILICON

被引：0

|

作者：

BOGDANOV, EI

LARIKOV, LN

MAKSIMENKO, EA

机构：

来源：

UKRAINSKII FIZICHESKII ZHURNAL | 1990年 / 35卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：87 / 89

页数：3

相关论文

共 50 条

[1] A CONTRIBUTION OF DIFFUSION-INDUCED STRUCTURAL-CHANGES ON THE ANISOTROPY OF THE DIFFUSION OF P IN SI
LARIKOV, LN
BOGDANOV, EI
MAXIMENKO, EA
CRYSTAL RESEARCH AND TECHNOLOGY, 1990, 25 (01) : 51 - 54
[2] EFFECT OF DIFFUSION-INDUCED STRAIN ON PHOSPHORUS DIFFUSION INTO SILICON
MATSUMOTO, S
NIIMI, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C309 - C309
[3] EFFECTS OF DIFFUSION-INDUCED STRAIN AND DISLOCATION ON PHOSPHORUS DIFFUSION INTO SILICON
MATSUMOTO, S
AKAO, Y
KOHIYAMA, K
NIIMI, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) : 1840 - 1845
[4] RETARDATION OF DIFFUSION BY DIFFUSION-INDUCED DISLOCATION IN SILICON
YOSHIDA, M
KANAMORI, S
JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (03) : 338 - &
[5] DIFFUSION-INDUCED IMPERFECTIONS IN SILICON
JOSHI, ML
WILHELM, F
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) : 185 - &
[6] DIFFUSION-INDUCED DISLOCATIONS IN SILICON
WASHBURN, J
THOMAS, G
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1909 - &
[7] Diffusion-induced stress and magnetic anisotropy
Conyers, JS
Greer, AL
Hall, MJ
Somekh, RE
DEFECT AND DIFFUSION FORUM, 1997, 143 : 741 - 746
[8] EFFECT OF DIFFUSION-INDUCED DISLOCATIONS ON ANTIMONY DIFFUSION INTO SILICON
SONG, SH
NIIMI, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 145 - 149
[9] DISTRIBUTION OF SURFACE STATE DENSITY RELATED TO DIFFUSION-INDUCED DISLOCATIONS NEAR JUNCTION FORMED BY DIFFUSION OF PHOSPHORUS IN SILICON
NISHIDA, M
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (05) : 673 - &
[10] DIFFUSION-INDUCED DEFECTS IN SILICON .2.
LEVINE, E
WASHBURN, J
THOMAS, G
JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 87 - &

← 1 2 3 4 5 →