THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON

被引：21
|
作者：
OURMAZD, A [1 ]
WILSHAW, PR [1 ]
BOOKER, GR [1 ]
机构：
[1] DEPT MET & SCI MAT,OXFORD,ENGLAND
来源：
JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-4期
关键词：
D O I：
10.1051/jphyscol:1983434
中图分类号：
学科分类号：
摘要：
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页码：289 / 295
页数：7
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