SEMI-INSULATING IN0.53GA0.47AS BY FE DOPING

被引：20

作者：

CLAWSON, AR ^{[1
]}

MULLIN, DP ^{[1
]}

ELDER, DI ^{[1
]}

WIEDER, HH ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,DEPT ELECT ENGN & COMP SCI,LA JOLLA,CA 92093

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90253-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：90 / 95

页数：6

共 20 条

[1] EFFECT OF BAKING TEMPERATURE ON PURITY OF LPE GA0.47IN0.53AS [J].

AMANO, T ;

TAKAHEI, K ;

NAGAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :2105-2109

[2]

GARDNER PD, 1981, RCA REV, V42, P542

[3] GROWTH OF BUFFERED GAAS-MESFET STRUCTURES BY LPE [J].

HOUSTON, PA .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (01) :79-93

[4] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[5]

KAUMANS K, 1982, I PHYS C SER, V63, P329

[6] HIGH-RESISTIVITY LPE LAYERS OF GAAS BY IRON DOPING [J].

KOJIMA, K ;

HASEGAWA, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (02) :673-679

[7] LPE GROWTH OF HIGH-PURITY INP AND IN1-XGAXP1-YASY [J].

KUPHAL, E ;

POCKER, A .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :133-142

[8] MODEL RELATING ELECTRICAL-PROPERTIES AND IMPURITY CONCENTRATIONS IN SEMI-INSULATING GAAS [J].

LINDQUIST, PF .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1262-1267

[9] GROWTH AND PROPERTIES OF SEMI-INSULATING EPITAXIAL GAAS [J].

MATTES, BL ;

HOUNG, YM ;

PEARSON, GL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (04) :869-875

[10] SCHOTTKY BARRIERS AND OHMIC CONTACTS ON NORMAL-TYPE INP BASED COMPOUND SEMICONDUCTORS FOR MICROWAVE FETS [J].

MORKOC, H ;

DRUMMOND, TJ ;

STANCHAK, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (01) :1-5

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