C-BAND 6-BIT GAAS MONOLITHIC PHASE-SHIFTER

被引：15

作者：

ANDRICOS, C ^{[1
]}

BAHL, IJ ^{[1
]}

GRIFFIN, EL ^{[1
]}

机构：

[1] ITT,GALLIUM ARSENIDE TECHNOL CTR,ROANOKE,VA 24019

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1985年 / 33卷 / 12期

关键词：

D O I：

10.1109/TMTT.1985.1133262

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1591 / 1596

页数：6

共 19 条

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[2]

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BAHL, IJ ;

GUPTA, KC .

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[4]

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[5] LOW-COST DESIGN TECHNIQUES FOR SEMICONDUCTOR PHASE SHIFTERS [J].

BURNS, RW ;

HOLDEN, RL ;

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[6]

BURNS RW, 1965, MICROWAVES, V4, P38

[7] DESIGN EQUATIONS AND BANDWIDTH OF LOADED-LINE PHASE SHIFTERS [J].

DAVIS, WA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (05) :561-563

[8]

FISHER RE, 1969, MICROWAVE J, V12, P63

[9] BROAD-BAND DIODE PHASE SHIFTERS [J].

GARVER, RV .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1972, MT20 (05) :314-&

[10] BROADBAND BINARY 180 DEGREES DIODE PHASE MODULATORS [J].

GARVER, RV .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1965, MT13 (01) :32-&

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