FORMATION OF P-PHOTODIODES ON N-PHOTODIODES IN HG1-XCDXTE BY ION-IMPLANTATION AND CW CO2-LASER ANNEALING

被引：14
作者：
KALISH, R
BAHIR, G
机构：
[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
[2] TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,MICROELECTR RES CTR,IL-32000 HAIFA,ISRAEL
来源：
JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(85)90193-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：474 / 477
页数：4
相关论文
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