SI AS A DIFFUSION BARRIER FOR GE/GAAS HETEROJUNCTIONS

被引：20

作者：

STRITE, S ^{[1
]}

UNLU, MS ^{[1
]}

ADOMI, K ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 17期

关键词：

D O I：

10.1063/1.103113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the electrical characteristics, before and after annealing, of p-Ge/N-GaAs heterojunction diodes to similar diodes which incorporate a nominally 10 Å layer of pseudomorphic Si at the Ge/GaAs interface. Both types of diodes exhibit excellent current-voltage characteristics before annealing. Diodes having no Si interlayer show significant degradation after a 20 min anneal at 640 °C. Diodes incorporating the Si interlayer retain excellent diode characteristics after a 20 min anneal at temperatures as high as 720 °C.

引用

页码：1673 / 1675

页数：3

共 10 条

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