INSTABILITY IN RADIATIVELY MELTED SILICON FILMS

被引：42

作者：

JACKSON, KA ^{[1
]}

KURTZE, DA ^{[1
]}

机构：

[1] CLARKSON COLL TECHNOL,DEPT PHYS,POTSDAM,NY 13676

来源：

关键词：

D O I：

10.1016/0022-0248(85)90095-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：385 / 390

页数：6

共 7 条

[1] BIEGELSEN DK, 1982, NOV MRS S LAS ANN BO
[2] BIEGELSEN DK, COMMUNICATION
[3] LASER-INDUCED MELT DYNAMICS OF SI AND SILICA
BOSCH, MA
LEMONS, RA
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (16) : 1151 - 1155
[4] INSTABILITY AT THE MELTING THRESHOLD OF LASER-IRRADIATED SILICON
COMBESCOT, M
BOK, J
LAGUILLAUME, CB
[J]. PHYSICAL REVIEW B, 1984, 29 (11): : 6393 - 6395
[5] ORIGIN OF LAMELLAE IN RADIATIVELY MELTED SILICON FILMS
HAWKINS, WG
BIEGELSEN, DK
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (04) : 358 - 360
[6] STABILITY OF PLANAR INTERFACE DURING SOLIDIFICATION OF DILUTE BINARY ALLOY
MULLINS, WW
SEKERKA, RF
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 444 - &
[7] NEMANICH RJ, 1982, NOV MRS S LAS ANN BO